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AOT428 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT428 is Pb-free (meets ROHS & Sony 259 specifications). AOT428L is a Green Product ordering option. AOT428 and AOT428L are electrically identical.
TO-220 D
Features
VDS (V) = 75V ID = 80A (VGS = 10V) RDS(ON) < 11 m (VGS = 10V)
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 75 30 80 57 300 60 180 115 58 -55 to 175
Units V V A A mJ W C
TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C
Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Steady-State Steady-State
Symbol RJA RJC
Typ 60 0.7
Max 75 1.3
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOT428
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C VDS=5V, ID=30A 2 200 9.1 15.5 100 0.7 1 55 3790 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 321 222 1.25 65 VGS=10V, VDS=30V, ID=30A 23 23.5 20 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 48 30 10 43 88 4900 420 290 1.5 85 30 31 26 63 40 13 56 114 11 20 3.4 Min 75 0.02 1 5 100 4.5 Typ Max Units V A nA V A m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. 11 Rev 0: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300 20V 250 200 ID (A) 150 8V 100 50 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7V 10V 60 125C ID(A) 40 80 VDS=5V
VGS=10V, ID=30A
VGS=6V
20 25C 0 2 3 4 5 6 7 8
VGS(Volts) Figure 2: Transfer Characteristics 2.4 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 VGS=10V ID=30A
12 11 RDS(ON) (m) 10 VGS=10V 9 8 7 0 20 40 60 80
20 48 30 10
26 63 40 13
0.8 0 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 ID=30A
1.0E+01 16 RDS(ON) (m) 125C 125C IS (A) 1.0E+00 1.0E-01 1.0E-02 8 1.0E-03 25C 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
12
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6 14 12 10 VGS (Volts) 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=150C, TA=25C 100 ID (Amps) RDS(ON) limited 10s 100s Power (W) 1ms 10 10ms 100m 1 DC 1s 10s 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.3C/W 1 VDS=30V ID=30A Capacitance (nF) 5 Ciss 4 3 2 Coss 1 0 0 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 15 75 Crss
VGS=10V, ID=30A
900 TJ(Max)=175C TA=25C
700
500
300
20 48 30 10
26 63 40 13
100 0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current 80 60 40 20 TA=25C 150
tA =
BV - VDD
Power Dissipation (W)
L ID
120
90 60
VGS=10V, ID=30A
30 0
0 0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
TCASE (C) Figure 13: Power De-rating (Note B)
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.

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